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savantic semiconductor product specification silicon npn power transistors BUV47A d escription with to-3pn package high breakdown voltage fast switching time applications suited for 220v switchmode power supply,dc and ac motor control pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 7 v i c collector current 9 a i cm collector current-peak 15 a i b base current 3 a i bm base current -peak 6 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUV47A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;l=25mh 450 v v (br)ebo emitter-base breakdown voltage i e =50ma ;i c =0 7 30 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =1.0a 1.5 v v cesat-2 collector-emitter saturation voltage i c =8a; i b =2.5a 3.0 v v besat base-emitter saturation voltage i c =5a; i b =1.0a 1.6 v i ces collector cut-off current v ce =1000v; v be =0 t c =125 0.15 1.5 ma i cer collector cut-off current v cb =1000v;r be =10 b t c =125 0.4 3.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe dc current gain i c =1a ; v ce =5v 15 50 f t transition frquency i c =0.5a ; v ce =10v;f=1mhz 8 mhz c ob output capacitance i c =0 ; v cb =20v;f=0.1mhz 105 pf switching times resistive load t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c =5a; i b1 =-i b2 =1a v cc =150v 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUV47A package outline fig.2 outline dimensions |
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